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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
with Temperature
1.100
Figure 8. Body Diode Forward Voltage Variation
with Source Current and Temperature.
10000
1.075
I D =250uA
V GS = 0 V
1000
1.050
1.025
100
T A =125 C
o
1.000
10
T A =25 C
0.975
0.950
1
o
T A =-55 C
o
0.925
-25
0
25
50
75
100
125
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T J , Junction Temperatture( C)
o
Figure 9. Capacitance Characteristics.
100
VSD. Body Diode Forward Voltage [V]
Figure 10. Gate Charge Characteristics.
10
V DS = 25V
8
C ISS
6
10
C OSS
4
I D = 500mA
f = 1MHZ
V GS = 0V
C RSS
2
I D = 115mA
I D = 280mA
1
0
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
V DS . Drain to Source Voltage (V)
Figure 11. Maximum Safe Operating Area.
Qg. Gate Charge (nC)
Figure 12. Transient Thermal Response Curve.
10
1
0
1ms
100 μ s
50%
10
Rthja=410 C/W
-1
R DS(on) Limit
DC
10ms
100ms
1S
0.1
20%
10%
Rthja(t)=r(t)*Rthja
o
10
-2
5%
10
Rthja=410 C/W
-3
Vgs=10V
Single Pulse
o
2%
D=1%
T a = 25 C
o
Single Pulse
10
10
10
10
10
-4
-1
0
1
2
0.01
1E-4
1E-3
0.01
0.1
1
10
100
1000
V DS , Drain-Source Voltage [V]
? 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
4
t1, time(sec)
www.fairchildsemi.com
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